品牌 hjsx 型号 50n06 种类 绝缘栅(mosfet) 沟道类型 n沟道 导电方式 增强型 用途 t激励、驱动 封装外形 wafe裸芯片 材料 n-fet硅n沟道 开启电压 =（v） 夹断电压 =（v） 跨导 =（μs） 极间电容 =（pf） 低频噪声系数 =（db） 大漏极电流 =（ma） 大耗散功率 =（mw） 50 amps，60volts n-channel mosfet ■ description the 50n06 is a n-channel enhancement mosfet and is designed to have better characteristics, such as superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applicatio such as automotive dc/dc converte, and high efficiency switching for power management in portable and battery operated products. ■ features ? rds(on)=0.023ω@vgs=10v ? low gate charge(typical 31nc) ? low revee trafer capacitance(c=typical 80pf) ? fast switching capability ? avalanche energy specified ? improved dv/dt capability,high ruggedness absolute maximum ratings(tc=25℃,unless otherwise specified) parameter symbol ratings units drain-source voltage vdss 60 v gate-source voltage vgss ±20 v tc=25℃ 50 a drain currenet continuous tc=100℃ id 35 a drain current pulsed (note 1) idp 200 a repetitive (note 1) ear 13 mj avalanche energy single pulse(note 2) eas 480 mj peak diode recovery dv/dt(note 3) dv/dt 7.0 v/ tc=25℃ 120 w total power dissipation derate above 25℃ pd 0.8 w/℃ operation junction temperature tj -55 to+150 ℃ storage temperature tstg -55~+150 ℃