general description

the hs517r omnipolar hall effect sensor ic is fabricated from mixed signal cmos technology. it

incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch

points.

the circuit design provides an internally controlled clocking mechanism to cycle power to the hall

element and analog signal processing circuits.this serves to place the high current-cons uming portions of

the circuit into a “sleep” mode. periodically the device is “awakened” by this internal logic and the

magnetic flux from the hall element is evaluated against the predefined thresholds. if the flux density is

above or below the b op/brp thresholds then the output transistor is driven to change states

accordingly. while in the “sleep” cycle the output transistor is latched in its previous state. the design

has been optimized for service in applications requiring extended operating lifetime in battery powered

systems.

the output transistor of the hs517r will be latched on (bop) in the presence of a sufficiently

strong south or north magnetic field facing the marked side of the package. the output will be latched

off (brp) in the absence of amagnetic field.it incorporates advanced chopper-stabilization techniques to

provide accurate and stable magnetic switch points.

featrues

v cmos output

v micropower consumption for battery powered

applications

v output switches with absolute value of north

or south pole from magnet

v

operation down to 1.6v

v

high sensitivity for direct reed switch

replacement applications

v

ultra low power consumption at 3ua (avg)

v

high esd protection, hmb > ±8kv( min )

applications

v

solid state switch

v

handheld wireless handset awake switch

v

lid close sensor for battery powered devices

v

magnet proximity sensor for reed switch

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